onsemi BAV56TT1
Dual Switching Diode
| Part No. | BAV56TT1 |
|---|---|
| Datasheet | BAV56TT1 Download |
| Manufacturer |  onsemi |
| Description | Dual Switching Diode |
| Buy | Stock & Price |
FEATURES
● Pb−Free Package is AvailableMAXIMUM RATINGS
(TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Max 70 200 500 Unit Vdc mAdc mAdc 3 ANODE CATHODE 1 2 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR−4 Board (Note 1), TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation, FR−4 Board (Note 2), TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range Symbol PD 225 1.8 RθJA PD 360 2.9 RθJA TJ, Tstg 345 −55 to +150 mW mW/°C °C/W °C 555 mW mW/°C °C/W 1 CASE 463 SC−75/SOT−416 STYLE 4 Max Unit MARKING DIAGRAM Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2.
