onsemi BAV70DXV6
Monolithic Dual Switching Diode Common Cathode
| Part No. | BAV70DXV6 |
|---|---|
| Datasheet | BAV70DXV6 Download |
| Manufacturer |  onsemi |
| Description | Monolithic Dual Switching Diode Common Cathode |
| Buy | Stock & Price |
FEATURES
● NSV Prefix for Automotive and OtherAPPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
(EACH DIODE) Rating Symbol Value Unit Reverse Voltage Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS VR 100 IF 200 IFM(surge) 500 Vdc mAdc mAdc Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation, TA = 25°C Derate above 25°C PD 357 mW (Note 1) 2.9 mW/°C (Note 1) Thermal Resistance, Junction-to-Ambient RqJA 350 °C/W (Note 1) Characteristic (Both Junctions Heated) Symbol Max Unit Total Device Dissipation, TA = 25°C Derate above 25°C PD 500 mW (Note 1) 4.0 mW/°C (Note 1) Thermal Resistance, Junction-to-Ambient RqJA 250 °C/W (Note 1) Junction and Storage Temperature Range TJ, Tstg − 55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
