onsemi BAV70L
Dual Switching Diode Common Cathode
FEATURES
● S Prefix for Automotive and OtherAPPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
(EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 100 V Forward Current IF 200 mA Repetitive Peak Forward Current IFRM 1.5 A (Pulse Wave = 1 sec, Duty Cycle = 66%) Non−Repetitive Peak Forward Current IFSM A (Square Wave, TJ = 25°C prior to surge) t = 1 ms 31 t = 10 ms 16 t = 100 ms 10 t = 1 ms 4.5 t = 10 ms 2.5 t = 100 ms 1.0 t=1s 0.5 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg − 55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.