onsemi BAV70LT1
Monolithic Dual Switching Diode Common Cathode
| Part No. | BAV70LT1 |
|---|---|
| Datasheet | BAV70LT1 Download |
| Manufacturer |  onsemi |
| Description | Monolithic Dual Switching Diode Common Cathode |
| Buy | Stock & Price |
MAXIMUM RATINGS
(EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 70 200 500 Unit Vdc mAdc mAdc BAV70LT1 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C CASE 318–08, STYLE 9 SOT–23 (TO–236AB) 3 CATHODE ANODE 1 2 ANODE DEVICE MARKING BAV70LT1 = A4ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage Current (Note 3) (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150°C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Volt...
