onsemi BAV70LT3G
Dual Switching Diode Common Cathode
| Part No. | BAV70LT3G |
|---|---|
| Datasheet | BAV70LT3G Download |
| Manufacturer |  onsemi |
| Description | Dual Switching Diode Common Cathode |
| Buy | Stock & Price |
FEATURES
● S Prefix for Automotive and OtherAPPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*
MAXIMUM RATINGS
(EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR Forward Current IF Peak Forward Surge Current IFM(surge) Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM 100 200 500 1.5 V mA mA A Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 10 ms t = 100 ms t = 1 ms t = 10 ms t = 100 ms IFSM 31 16 10 4.5 2.5 1.0 A THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg − 55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.
