onsemi BBS3002
P-Channel Power MOSFET
| Part No. | BBS3002 |
|---|---|
| Datasheet | BBS3002 Download |
| Manufacturer |  onsemi |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● ON-resistance RDS(on)1=4.4mΩ (typ.)● Input capacitance Ciss=13200pF (typ.)
● 4V drive TO-263 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--30V, L=100μH, IAV=--60A (Fig.1) *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --60 ±20 --100 --400 90 150 --55 to +150 340 --60 Unit V V A A W °C °C mJ A Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.ELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage Zero-Gate...
