onsemi BC487
High Current Transistors
FEATURES
● Pb−Free Packages are Available*MAXIMUM RATINGS
Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 60 Vdc 60 Vdc 5.0 Vdc 0.5 Adc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD Derate above 25°C 1.5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg − 55 to +150 °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W COLLECTOR 1 2 BASE 3 EMITTER MARKING DIAGRAM 123 STRAIGHT LEAD BULK PACK TO−92 CASE 29 STYLE 17...