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BC487B Datasheet PDF

onsemi BC487B

High Current Transistors

Part No. BC487B
Datasheet BC487B Download
Manufacturer
onsemi
Description High Current Transistors
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BC487B datasheet page 1 preview

FEATURES

● Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 60 Vdc 60 Vdc 5.0 Vdc 0.5 Adc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD Derate above 25°C 1.5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg − 55 to +150 °C Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W COLLECTOR 1 2 BASE 3 EMITTER MARKING DIAGRAM 123 STRAIGHT LEAD BULK PACK TO−92 CASE 29 STYLE 17...
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