onsemi BC489
High Current Transistors
| Part No. | BC489 |
|---|---|
| Datasheet | BC489 Download |
| Manufacturer |  onsemi |
| Description | High Current Transistors |
| Buy | Stock & Price |
FEATURES
● These are Pb−Free Devices*MAXIMUM RATINGS
Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Collector −Emitter Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range VCEO VCBO VEBO IC PD 80 Vdc 80 Vdc 5.0 Vdc 0.5 Adc 625 mW 5.0 mW/°C PD 1.5 W 12 mW/°C TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. COLLECTOR 1 2 BASE 3 EMITTER TO−92 CASE 29 STYLE 17 123 STRAIGHT LEAD BULK PACK 1 2 3 BENT...
