onsemi BC847
General Purpose Transistors
FEATURES
● S and NSV Prefix for Automotive and OtherAPPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable● These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SC-70/SOT-323 CASE 419 STYLE 3 MARKING DIAGRAM
MAXIMUM RATINGS
Rating Symbol Value Unit Collector-Emitter Voltage BC846 BC847 BC848 VCEO V 65 45 30 Collector-Base Voltage BC846 BC847 BC848 VCBO V 80 50 30 Emitter-Base Voltage BC846 BC847 BC848 VEBO V 6.0 6.0 5.0 Collector Current − Continuous IC 100 mAdc Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board, (Note 1) TA = 25 C PD 200 mW Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature RqJA TJ, Tstg 620 −55 to +150 C/W C 1.