onsemi BC856B
PNP Silicon Transistor
| Part No. | BC856B |
|---|---|
| Datasheet | BC856B Download |
| Manufacturer |  onsemi |
| Description | PNP Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● S and NSV Prefix for Automotive and OtherAPPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
(TA = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage BC856 BC857 BC858 VCEO V −65 −45 −30 Collector-Base Voltage BC856 BC857 BC858 VCBO V −80 −50 −30 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak (1 ms pulse) THERMAL CHARACTERISTICS VEBO IC ICM −5.0 −100 −130 V mAdc mA Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25C Thermal Resistance, Junction−to−Ambient PD RqJA 150 mW 883 C/W Junction and Storage Temperature TJ, Tstg − 55 to +150 C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
