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BC856BM3 Datasheet PDF

onsemi BC856BM3

General Purpose Transistor

Part No. BC856BM3
Datasheet BC856BM3 Download
Manufacturer
onsemi
Description General Purpose Transistor
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BC856BM3 datasheet page 1 preview

FEATURES

● NSV Prefix for Automotive and Other

APPLICATIONS

Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS VCEO VCBO VEBO IC −65 −80 −5.0 −100 V V V mA Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD 265 mW 2.1 mW/°C Thermal Resistance, Junction to Ambient (Note 1) RqJA 470 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2) PD RqJA 640 mW 5.1 mW/°C 195 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
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