onsemi BCP53T1G
PNP Silicon Epitaxial Transistors
| Part No. | BCP53T1G |
|---|---|
| Datasheet | BCP53T1G Download |
| Manufacturer |  onsemi |
| Description | PNP Silicon Epitaxial Transistors |
| Buy | Stock & Price |
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient (Surface Mounted) RqJA 83.3 °C/W Lead Temperature for Soldering, 0.0625″ from case Time in Solder Bath TL 260 °C 10 s
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Collector Current − Peak, single pulse, tp ≤ 1 ms Base Current − Continuous Base Collector Current − Peak, single pulse, tp ≤ 1 ms Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C VCEO VCBO VEBO IC ICM IB IBM PD −80 V −100 V −5.0 V 1.5 A 3.0 A −0.3 A −0.4 A 1.5 W 12 mW/°C Operating and Storage Temperature Range TJ, Tstg −65 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
