BCV71 Datasheet PDF

DESCRIPTION

Sourced from process 10.

ABSOLUTE MAXIMUM RATINGS

(TA = 25C unless otherwise noted.) (Notes 1, 2) Symbol Parameter Value Unit VCEO VCBO VEBO IC TJ, TSTG Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Operating and Storage Junction Temperature Range 60 V 80 V 5.0 V 500 mA −55 to +150 C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady−state limits. onsemi should be consulted on applications involving pulsed or low−duty−cycle operations. THERMAL CHARACTERISTICS (TA = 25C unless otherwise noted.) (Note 3) Symbol Parameter Max PD Total Device Dissipation 350 Derate Above 25C 2.8 R●JA Thermal Resistance, 357 Junction−to−Ambient 3. Device mounted on FR−4PCB 40 mm x 40 mm x 1.5 mm.