onsemi BCW30LT1
General Purpose Transistors(PNP Silicon)
| Part No. | BCW30LT1 |
|---|---|
| Datasheet | BCW30LT1 Download |
| Manufacturer |  onsemi |
| Description | General Purpose Transistors(PNP Silicon) |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –32 –32 –5.0 –100 Unit Vdc Vdc Vdc mAdc 1 BASE COLLECTOR 3 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature (1) FR– 5 = 1.0 0.75 (2) Alumina = 0.4 0.3 Symbol PD 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 –55 to +150 mW/°C °C/W mW mW/°C °C/W °C C2x SOT–23 (TO–236AB) CASE 318 STYLE 6 1 2 Value Unit mW 3 DEVICE MARKING 0.062 in. 0.024 in. 99.5% alumina. x = Monthly Date Code ORDERING INFORMATION Device BCW30LT1 Package SOT–23 Shipping 3000 Units/Rail © Semiconductor Components Industries, LLC, 1999 1 November, 1999 – Rev. 0 Publication Order Number: BCW30LT1/D BCW30LT1 ELECTRICAL CHA...
