onsemi BCW69LT1
General Purpose Transistors
| Part No. | BCW69LT1 |
|---|---|
| Datasheet | BCW69LT1 Download |
| Manufacturer |  onsemi |
| Description | General Purpose Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Emitter−Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol VCEO VEBO IC Value −45 −5.0 −100 Unit Vdc Vdc mAdc Symbol PD RθJA Max 225 1.8 556 Unit mW mW/°C °C/W PD RθJA 300 mW 2.4 mW/°C 417 °C/W TJ, Tstg − 55 to +150 °C 3 1 2 CASE 318 −08, STYLE 6 SOT−23 (TO −236AB) COLLECTOR 3 1 BASE 2 EMITTERELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = −2.0 mAdc, IB = 0) Collector−Emitter Breakdown Voltage (IC = −100 μAdc, VEB = 0) Emitter−Base Breakdown Voltage (IE = −10 μAdc, IC = 0) Collector Cutoff Current (VCB = −20 Vdc, IE = 0) (VCB = −20 Vdc, IE = 0, TA = 100°C) 1.
