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BCX19LT1G Datasheet PDF

onsemi BCX19LT1G

NPN Transistor

Part No. BCX19LT1G
Datasheet BCX19LT1G Download
Manufacturer
onsemi
Description NPN Transistor
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BCX19LT1G datasheet page 1 preview

FEATURES

● S and NSV Prefix for Automotive and Other

APPLICATIONS

Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MAXIMUM RATINGS

Symbol Rating Value Unit VCEO Collector − Emitter Voltage BCX17, BCX19 BCX18 Vdc 45 25 VCBO Collector − Base Voltage BCX17, BCX19 BCX18 Vdc 50 30 VEBO Emitter − Base Voltage 5.0 Vdc IC Collector Current − Continuous 500 mAdc Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Characteristic Max Unit PD Total Device Dissipation FR− 5 Board (Note 1), TA = 25C Derate above 25C 225 mW 1.8 mW/C RqJA PD Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C 556 C/W 300 mW 2.4 mW/C RqJA Thermal Resistance, Junction−to−Ambient TJ, Tstg Junction and Storage Temperature 1.
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