onsemi BCX19LT1G
NPN Transistor
FEATURES
● S and NSV Prefix for Automotive and OtherAPPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
Symbol Rating Value Unit VCEO Collector − Emitter Voltage BCX17, BCX19 BCX18 Vdc 45 25 VCBO Collector − Base Voltage BCX17, BCX19 BCX18 Vdc 50 30 VEBO Emitter − Base Voltage 5.0 Vdc IC Collector Current − Continuous 500 mAdc Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Characteristic Max Unit PD Total Device Dissipation FR− 5 Board (Note 1), TA = 25C Derate above 25C 225 mW 1.8 mW/C RqJA PD Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C 556 C/W 300 mW 2.4 mW/C RqJA Thermal Resistance, Junction−to−Ambient TJ, Tstg Junction and Storage Temperature 1.