onsemi BCX70GLT1
General Purpose Transistors
| Part No. | BCX70GLT1 |
|---|---|
| Datasheet | BCX70GLT1 Download |
| Manufacturer |  onsemi |
| Description | General Purpose Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS VCEO VCBO VEBO IC 45 Vdc 45 Vdc 5.0 Vdc 200 mAdc Characteristic Total Device Dissipation FR− 5 Board(1) TA = 25°C Derate above 25°C Symbol PD Max 225 1.8 Unit mW mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg − 55 to +150 °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 2.0 mAdc, IE= 0) Emitter −Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
