onsemi BD138G
Plastic Medium-Power Silicon PNP Transistors
| Part No. | BD138G |
|---|---|
| Datasheet | BD138G Download |
| Manufacturer |  onsemi |
| Description | Plastic Medium-Power Silicon PNP Transistors |
| Buy | Stock & Price |
FEATURES
● High DC Current Gain● BD 136, 138, 140 are complementary with BD 135, 137, 139
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit Collector−Emitter Voltage BD136G BD138G BD140G VCEO Vdc 45 60 80 Collector−Base Voltage BD136G BD138G BD140G VCBO Vdc 45 60 100 Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC IB PD 5.0 Vdc 1.5 Adc 0.5 Adc 1.25 Watts 10 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 12.5 Watts 100 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to + 150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction−to−Case RqJC 10 Thermal Resistance, Junction−to−Ambi...
