onsemi BD139G
Plastic Medium-Power Silicon NPN Transistors
| Part No. | BD139G |
|---|---|
| Datasheet | BD139G Download |
| Manufacturer |  onsemi |
| Description | Plastic Medium-Power Silicon NPN Transistors |
| Buy | Stock & Price |
FEATURES
● High DC Current Gain● BD 135, 137, 139 are complementary with BD 136, 138, 140
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit Collector−Emitter Voltage BD135G BD137G BD139G VCEO Vdc 45 60 80 Collector−Base Voltage BD135G BD137G BD139G VCBO Vdc 45 60 100 Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC IB PD 5.0 Vdc 1.5 Adc 0.5 Adc 1.25 Watts 10 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 12.5 Watts 100 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to + 150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Symbol RqJC RqJ...
