onsemi BD159G
Plastic Medium-PowerSilicon NPN Transistor
| Part No. | BD159G |
|---|---|
| Datasheet | BD159G Download |
| Manufacturer |  onsemi |
| Description | Plastic Medium-PowerSilicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
● Suitable for Transformerless, Line−Operated Equipment● Thermopadt Construction Provides High Power Dissipation Rating
● for High Reliability These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC ICM IB PD 20 0.16 TJ, Tstg –65 to +150 W mW/_C _C Value 350 375 5.0 0.5 1.0 0.25 Unit Vdc Vdc Vdc Adc Adc Adc 0.5 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS, 20 WATTS COLLECTOR 2 3 BASE 1 EMITTER Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO−225 CASE 77 STYLE 1 1 2...
