onsemi BD249C
NPN High-Power Transistor
| Part No. | BD249C |
|---|---|
| Datasheet | BD249C Download |
| Manufacturer |  onsemi |
| Description | NPN High-Power Transistor |
| Buy | Stock & Price |
FEATURES
● ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V● Epoxy Meets UL 94 V−0 @ 0.125
● Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Peak (Note 1) VCEO VCBO VEBO IC 100 100 5.0 25 40 Vdc Vdc Vdc Adc Apk Base Current − Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C IB PD 5.0 Adc 125 W 1.0 W/°C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to +150 °C Unclamped Inductive Load ESB 90 mJ THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.0 °C/W Thermal Resistance, Junction−to−Ambient RqJA 35.7 °C/W Stresses exceedingMAXIMUM RATINGS
may damage the device.
