onsemi BD438
PNP Transistor
FEATURES
● Pb−Free Packages are Available* 4.0 AMP POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating Symbol Value Unit Collector−Emitter Voltage BD436 BD438 BD440 BD442 VCEO 32 45 60 80 Vdc Collector−Base Voltage BD436 BD438 BD440 BD442 VCBO 32 45 60 80 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 36 W 288 W/°C Operating and Storage Junction TJ, Tstg – 55 to + 150 °C Temperature Range ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case qJC 3.5 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For ad...