onsemi BDX54BG
Plastic Medium-Power Complementary Silicon Transistors
| Part No. | BDX54BG |
|---|---|
| Datasheet | BDX54BG Download |
| Manufacturer |  onsemi |
| Description | Plastic Medium-Power Complementary Silicon Transistors |
| Buy | Stock & Price |
FEATURES
● High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc● Collector Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C
● Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
● Monolithic Construction with Built−In Base−Emitter Shunt Resistors
● These Devices are Pb−Free and are RoHS Compliant* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating Symbol Value Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage VCEO Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BDX53B, BDX54B 80 BDX53C, BDX54C 100 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage VCB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BDX53B, BDX54B BDX53C, BDX54C Vdc 80 100 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current − Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ − Peak VEB 5.0 Vdc IC 8.0 Adc 12 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current IB 0.2 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @ TC = 25°C PD 65 W De...
