onsemi C106
Sensitive Gate Silicon Controlled Rectifiers
| Part No. | C106 |
|---|---|
| Datasheet | C106 Download |
| Manufacturer |  onsemi |
| Description | Sensitive Gate Silicon Controlled Rectifiers |
| Buy | Stock & Price |
FEATURES
● Glassivated Surface for Reliability and Uniformity● Power Rated at Economical Prices
● Practical Level Triggering and Holding Characteristics
● Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability
● Sensitive Gate Triggering
● These are Pb−Free Devices
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Characteristic Symbol Max Unit Peak Repetitive Off−State Voltage (Note 1) (Sine Wave, 50−60 Hz, RGK = 1 kW, TC = −40° to 110°C) C106B C106D, C106D1* C106M, C106M1* VDRM, VRRM 200 400 600 V On-State RMS Current (180° Conduction Angles, TC = 80°C) Average On−State Current (180° Conduction Angles, TC = 80°C) IT(RMS) IT(AV) 4.0 2.55 A A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = +25°C) Circuit Fusing Considerations (t = 8.3 ms) ITSM I2t 20 1.65 A A2s Forward Peak Gate Power (Pulse Width v1.0 msec, TC = 80°C) Forward Average Gate Power (Pulse Width v1.0 msec, TC = 80°C) Forward Peak Gate Current (Pulse Widt...
