onsemi D45VH10
Complementary Silicon PNP Power Transistors
| Part No. | D45VH10 |
|---|---|
| Datasheet | D45VH10 Download |
| Manufacturer |  onsemi |
| Description | Complementary Silicon PNP Power Transistors |
| Buy | Stock & Price |
FEATURES
● Fast Switching●
KEY PARAMETERS
Specified @ 100 °C● Low Collector-Emitter Saturation Voltage
● Complementary Pairs Simplify Circuit Designs
● These Devices are Pb-Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current − Continuous Collector Current − Peak (Note 1) Total Power Dissipation @ TC = 25 °C Derate above 25 °C VCEO VCEV VEB IC ICM PD 80 100 7.0 15 20 83 0.67 Vdc Vdc Vdc Adc Adc W W/°C Operating and Storage Junction Temperature Range TJ, Tstg − 55 to 150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Width ≤ 6.0 ms, Duty Cycle ≤ 50%. THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction to Case RqJC 1.5 Thermal Resistance, Junction to Ambient RqJA 62.5 Maximum...
