onsemi DA121TT1
Silicon Switching Diode
| Part No. | DA121TT1 |
|---|---|
| Datasheet | DA121TT1 Download |
| Manufacturer |  onsemi |
| Description | Silicon Switching Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
(TA = 25°C) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol VR IF IFM(surge) Max 80 200 500 Unit V mA mA 3 CATHODE 1 ANODE Preferred Device THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR–4 Board (1) TA = 25°C Derated above 25°C Thermal Resistance, Junction to Ambient (1) Total Device Dissipation, FR–4 Board (2) TA = 25°C Derated above 25°C Thermal Resistance, Junction to Ambient (2) Junction and Storage Temperature Range (1) FR–4 @ Minimum Pad (2) FR–4 @ 1.0 × 1.0 Inch Pad Symbol PD 225 1.8 RθJA PD 360 2.9 RθJA TJ, Tstg 345 –55 to +150 mW mW/°C °C/W 555 mW mW/°C °C/W Max Unit 3 2 1 CASE 463 SOT–416/SC–75 STYLE 2 DEVICE MARKING 6A °C ORDERING INFORMATION Device DA121TT1 Package SOT–416 Shipping 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. This document contains information on a new product. Specifications and information herein are subject to change without notice. © Semiconductor Components Industries, LLC, 2000 1 May, 2000 – Rev.
