onsemi DTC123E
NPN SILICON BIAS RESISTOR TRANSISTOR
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25°C (1.) Derate above 25°C Symbol VCBO VCEO IC PD 350 2.81 mW mW/°C Value 50 50 100 Unit Vdc Vdc mAdc 2 BASE COLLECTOR 3 1 EMITTER THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath Symbol RθJA TJ, Tstg TL 260 10 Value 357 –55 to +150 Unit °C/W °C 1 2 3 °C Sec DEVICE MARKING AND RESISTOR VALUES Device DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z Marking DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 R2 (K) 10 22 47 47 ∞ ∞ 1.0 2.2 4.7 47 Shipping 5000/Box CASE 29 TO–92 (TO–226) STYLE 1 Preferred devices are recommended choices for future use and best overall value. 1. Device mo...