EB201 Datasheet PDF

EB201/D High Cell Density MOSFETs Low On–Resistance Affords New Design Options Prepared by: Kim Gauen and Wayne Chavez ON Semiconductor ENGINEERING BULLETIN Just a few years ago an affordable 60 V, 10 mΩ power transistor was a dream. After all, 10 mΩ is the resistance of about 20 cm of #22 gauge wire. Today a sub–10 mΩ power MOSFET is not only available, it is housed in a standard TO–220. Such are the advances that have occurred lately in “high cell density” power MOSFET technology. Furthermore, Motorola’s high cell density technology, HDTMOS®, brings other advantages such as greatly improved body diode performance. The technological advances are sufficiently great that they are fundamentally changing low voltage power transistor technology. Cutting the MOSFET’s On–Resistance A cross section of the power MOSFET is shown in Figure 1. The major contributors to the standard MOSFET’s SOURCE GATE on–resistance are its spreading, channel, JFET, accumulation region, and substrate resistances. To achieve ultra–low RDS(on), device designers must decrease the resistance of all these components.