onsemi ECH8501
Bipolar Transistor
| Part No. | ECH8501 |
|---|---|
| Datasheet | ECH8501 Download |
| Manufacturer |  onsemi |
| Description | Bipolar Transistor |
| Buy | Stock & Price |
FEATURES
●●
● Mounting height 0.9mm Composite type, facilitating high-density mounting Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A PNP : VCE(sat)= --0.1V(typ.)@IC= -2.5A Halogen free compliance
● Specifications ( ): PNP
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg PW≤1μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings (-30)40 (--)30 (-)6 (-)5 (-)30 (-)600 1.3 1.6 150 -55 to +150 Unit V V V A A mA W W °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above t Conditions is not implied. Extended exposure to stresses above the Recom...
