onsemi ECH8602M
N-Channel Power MOSFET
FEATURES
● 2.5V drive● Common-drain type
● Protection diode in
● Best suited for LiB charging and discharging switch
● Halogen free compliance Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature VDSS VGSS ID IDP PD PT Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Ratings 30 ±12 6 60 1.4 1.5 150 --55 to +150 Unit V V A A W W °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7011A-003 Top View 2.9 85 ECH8602M-TL-H 0.15 0 to 0.02 Product & Package Information● Package : ECH8
● JEITA, JEDEC :-
● Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking TZ TL Lot No.