onsemi ECH8607
N-Channel Silicon MOSFET
| Part No. | ECH8607 |
|---|---|
| Datasheet | ECH8607 Download |
| Manufacturer |  onsemi |
| Description | N-Channel Silicon MOSFET |
| Buy | Stock & Price |
FEATURES
● Low ON-resistance.● Ultrahigh-speed switching.
● 2.5V drive N-Channel Silicon MOSFET General-Purpose Switching Device
APPLICATIONS
SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit Mounted on a ceramic board (900mm2✕0.8mm) Ratings Unit 30 V ±10 V 5 A 40 A 1.3 W 1.5 W 150 °C --55 to +150 °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Marking : KG Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditi...
