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ECH8651R Datasheet PDF

onsemi ECH8651R

24V 10A N-Channel Power MOSFET

Part No. ECH8651R
Datasheet ECH8651R Download
Manufacturer
onsemi
Description 24V 10A N-Channel Power MOSFET
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ECH8651R datasheet page 1 preview

FEATURES

● Low ON-resistance
● 2.5V drive
● Common-drain type
● Protection diode in
● Built-in gate protection resistor
● Best suited for LiB charging and discharging switch
● Halogen free compliance Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Ratings Unit 24 V ±12 V 10 A 60 A 1.4 W 1.5 W 150 °C --55 to +150 °C Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 70...
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