onsemi ECH8654
-20V -5A Dual P-Channel Power MOSFET
FEATURES
● Low ON−resistance● 1.8 V Drive
● Halogen Free Compliance
● Protection Diode in SOT−28FL / ECH8 CASE 318BF MARKING DIAGRAM WZ LOT No.
ABSOLUTE MAXIMUM RATINGS
(at Ta = 25°C) Parameter Symbol Conditions Ratings Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGSS ±10 V Drain Current (DC) Drain Current (Pulse) ID IDP PW ≤ 10 ms, duty cycle ≤ 1% −5 A −40 A Allowable Power Dissipation PD When mounted on ceramic substrate 1.3 W (900 mm2 × 0.8 mm) 1 unit Total Power Dissipation PT When mounted on 1.5 W ceramic substrate (900 mm2 × 0.8 mm) Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CONNECTION 8 7 65 1 23 4 1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5: Drain 2 6: Drain 2 7: Drain 1 8: Drain 1 ORDERING INFORMATION Devi...