onsemi ECH8656
N-Channel Power MOSFET
FEATURES
● ON-resistance RDS(on)1=13mΩ (typ.)● Halogen free compliance
● Protection diode in
● 1.8V drive
● Nch + Nch MOSFET Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature VDSS VGSS ID IDP PD PT Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Ratings 20 ±10 7.5 40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7011A-001 Top View 2.9 85 ECH8656-TL-H 0.15 0 to 0.02 Product & Package Information● Package : ECH8
● JEITA, JEDEC :-
● Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking TB Lot No.