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ECH8656 Datasheet PDF

onsemi ECH8656

N-Channel Power MOSFET

Part No. ECH8656
Datasheet ECH8656 Download
Manufacturer
onsemi
Description N-Channel Power MOSFET
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ECH8656 datasheet page 1 preview

FEATURES

● ON-resistance RDS(on)1=13mΩ (typ.)
● Halogen free compliance
● Protection diode in
● 1.8V drive
● Nch + Nch MOSFET Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature VDSS VGSS ID IDP PD PT Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Ratings 20 ±10 7.5 40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7011A-001 Top View 2.9 85 ECH8656-TL-H 0.15 0 to 0.02 Product & Package Information
● Package : ECH8
● JEITA, JEDEC :-
● Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking TB Lot No.
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