onsemi ECH8663R
30V 8A Dual N-Channel Power MOSFET
| Part No. | ECH8663R |
|---|---|
| Datasheet | ECH8663R Download |
| Manufacturer |  onsemi |
| Description | 30V 8A Dual N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low ON−resistance● 2.5 V Drive
● Common−drain Type
● Protection Diode in
● Built−in Gate Protection Resistor
● Best Suited for LiB Charging and Discharging Switch
● Halogen Free Compliance Specifications
ABSOLUTE MAXIMUM RATINGS
(at Ta = 25°C) Parameter Symbol Conditions Ratings Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGSS ±12 V Drain Current (DC) Drain Current (Pulse) ID IDP PW ≤ 10 ms, duty cycle ≤ 1% 8 A 60 A Allowable Power Dissipation PD When mounted on 1.4 W ceramic substrate (900 mm2 × 0.8 mm) 1 unit Total Power Dissipation PT When mounted on 1.5 W ceramic substrate (900 mm2 × 0.8 mm) Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. SOT−28FL / ECH8 CASE 318BF MARKING DIAGRAM TJ LOT No. ELECTRICAL CONNECTION 8765...
