onsemi ECH8693R
N-Channel Power MOSFET
| Part No. | ECH8693R |
|---|---|
| Datasheet | ECH8693R Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low On-Resistance● 2.5 V drive
● Common-Drain Type
● ESD Diode-Protected Gate
● Built-in Gate Protection Resistor
● Pb-Free, Halogen Free and RoHS compliance Typical
APPLICATIONS
● 1-2 cells Lithium-ion Battery Charging and Discharging Switch SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage Gate to Source Voltage VDSS VGSS 24 V 12.5 V Drain Current (DC) ID 14 A Drain Current (Pulse) PW 10 s, duty cycle 1% IDP 60 A Power Dissipation Surface mounted on ceramic substrate PD (900 mm2 0.8 mm) 1 unit Total Dissipation Surface mounted on ceramic substrate PT (900 mm2 0.8 mm) 1.4 W 1.5 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Param...
