onsemi ECH8697R
This Power MOSFET features a low on−state resistance. This device is suitable for applications such as power switches of portable machines.| Part No. | ECH8697R |
|---|---|
| Datasheet | ECH8697R Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Best suited for 1−2 cells Lithium−ion Battery applications.FEATURES
● Low On−Resistance● 2.5 V Drive
● Common−Drain Type
● ESD Diode−Protected Gate
● Built−in Gate Protection Resistor
● These Devices are Pb−Free and are RoHS Compliant Typical
APPLICATIONS
● 1−2 cells Lithium−ion Battery Charging and Discharging SwitchABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Symbol Parameter Value Unit VDSS VGSS ID IDP Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW ≤ 10 ms, duty cycle ≤ 1% 24 V ±12.5 V 10 A 60 A PD Power Dissipation Surface mounted on ceramic substrate (1000 mm2 x 0.8 mm) 1 unit 1.5 W PT Total Dissipation Surface mounted on ceramic substrate (1000 mm2 x 0.8 mm) 1.6 W Tj Junction Temperature 150 °C Tstg Storage Temperature −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
