onsemi EFC6601R
N-Channel Power MOSFET
| Part No. | EFC6601R |
|---|---|
| Datasheet | EFC6601R Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 2.5V drive● Common-drain type
● 2KV ESD HBM
● Protection diode in
● Halogen free compliance Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Source-to-Source Voltage Gate-to-Source Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Channel Temperature VSSS VGSS IS ISP PT Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (5000mm2×0.8mm) Ratings 24 ±12 13 60 2.0 150 --55 to +150 Unit V V A A W °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7073-001 2.7 654 EFC6601R-TR Product & Package Information● Package : EFCP
● JEITA, JEDEC :-
● Minimum Packing Quantity : 5,000 pcs./reel Taping Type : TR Marking 0.65 1.81 0.2 123 0.65 1 : Source1 2 : Gate1 3 : Source1 4 : Source2 5 : Gate2 6 : Source2 0.3 EFCP2718-6CE-020 TR Electrical Connection 4, 6 Rg 5 MA LOT No.
