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EFC6602R Datasheet PDF

onsemi EFC6602R

Dual N-Channel Power MOSFET

Part No. EFC6602R
Datasheet EFC6602R Download
Manufacturer
onsemi
Description Dual N-Channel Power MOSFET
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EFC6602R datasheet page 1 preview

FEATURES

● 2.5 V Drive
● 2 kV ESD HBM
● Common−Drain Type
● ESD Diode−Protected Gate
● This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant Typical

APPLICATIONS

● 1−Cell Lithium−ion Battery Charging and Discharging Switch Specifications

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C) Parameter Symbol Value Unit Source−to−Source Voltage Gate−to−Source Voltage Source Current (DC) Source Current (Pulse) PW ≤ 10 ms, duty cycle ≤ 1% VSSS 12 V VGSS ±12 V IS 18 A ISP 60 A Total Dissipation (Note 1) Junction Temperature Storage Temperature PT 2.0 W TJ 150 °C TSTG − 55 to °C +150 Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Value Junction to Ambient (Note 1) RqJA 62.5 1. Surface mounted on ceramic substrate (5000 mm2 x 0.8 mm) Unit °C/W PIN ASSIGNMENT 6 54 123 (Top View) 1: Source...
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