onsemi EFC6611R
N-Channel Power MOSFET
| Part No. | EFC6611R |
|---|---|
| Datasheet | EFC6611R Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 2.5 V Drive● 2 kV ESD HBM
● Common−Drain Type
● ESD Diode−Protected Gate
● Pb−Free, Halogen Free and RoHS Compliance
APPLICATIONS
● 1−Cell Lithium−ion Battery Charging and Discharging Switch SPECIFICATIONSABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Parameter Symbol Value Unit Source to Source Voltage Gate to Source Voltage Source Current (DC) Source Current (Pulse) PW ≤ 100 ms, Duty Cycle ≤ 1% VSSS 12 V VGSS ±8 V IS 27 A ISP 100 A Total Dissipation PT Surface mounted on ceramic substrate (5000 mm2 x 0.8 mm) 2.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Junction to Ambient Surface mounted on ceramic substrate (5000 mm2 x 0.8 mm) RqJA Value 50 Unit °C/W DATA SHEET VSSS 12 V RSS(on) MAX 3.2 mW @ 4.
