onsemi EGP10F
High-Efficiency Rectifier
| Part No. | EGP10F |
|---|---|
| Datasheet | EGP10F Download |
| Manufacturer |  onsemi |
| Description | High-Efficiency Rectifier |
| Buy | Stock & Price |
FEATURES
● Superfast Recovery Time for High Efficiency● Low Forward Voltage, High Current Capability
● Low Leakage Current
● High Surge Current Capability
ABSOLUTE MAXIMUM RATINGS
(TA = 25C unless otherwise noted) Symbol Parameter Value Unit IO If(surge) Average Rectified Current 0.375” lead length @ TL = 75_C Peak Forward Surge Current 8.3 ms single half−sine−wave Superimposed on rated load (JEDEC method) 1.0 A 30 A PD Total Device Dissipation Derate above 25_C 2.5 W 17 mWC IC Thermal Resistance, Junction to Ambient 50 TJ, TSTG Junction and Storage Temperature Range −65~150 C/W C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. AXIAL LEAD / DO−41 CASE 017AH MARKING DIAGRAM EGP10X ZYWW EGP10X Z YWW = Specific...
