onsemi EMD4DXV6
the EMD4DXV6T1 series, two complementary BRT devices are housed in the SOT−563 package which is ideal for low power surface mount applications where board space is at a premium.| Part No. | EMD4DXV6 |
|---|---|
| Datasheet | EMD4DXV6 Download |
| Manufacturer |  onsemi |
| Description | Dual Bias Resistor Transistors |
| Buy | Stock & Price |
FEATURES
● Simplifies Circuit Design● Reduces Board Space
● Reduces Component Count
● NSV Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These are Pb−Free Devices
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation TA = 25°C (Note 1) Derate above 25°C (Note 1) PD 357 mW 2.9 mW/°C Thermal Resistance, Junction-to-Ambient (Note 1) RqJA 350 °C/W Total Device Dissipation TA = 25°C (Note 1) Derate above 25°C PD 500 mW 4.0 mW/°C Thermal Resistance, Junction-to-Ambient (Note 1) RqJA 250 °C/W Junction and Storage Temperature TJ, Tstg − 55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.
