onsemi ES1H
Fast Rectifiers
FEATURES
● For Surface MountAPPLICATIONS
● Glass Passivated Junction● Low Profile Package
● Easy Pick and Place
● Built-in Strain Relief
● Superfast Recovery Times for High Efficiency
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Value Symbol Parameter VRRM Maximum Repetitive Reverse Voltage ES1F ES1G ES1H ES1J Unit 300 400 500 600 V IF(AV) Average Rectified Forward Current 1.0 A IFSM Non-repetitive Peak 30 A Forward Surge Current 8.3 ms Single Half-Sine-Wave (JEDEC method) TJ Operating Junction Temperature Range −55 to 150 °C TSTG Storage Temperature −55 to 150 °C Range PD Power Dissipation 1.47 W Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Characteristics RθJA Thermal Resistance, Junction−to−Ambient (Note 1) RθJC Thermal Resistance, Junction−to−Case (Note 1) RθJL Thermal Resistance, Junction−to−Lead (Note 1) 1.