onsemi F6P02T3
NTF6P02T3
| Part No. | F6P02T3 |
|---|---|
| Datasheet | F6P02T3 Download |
| Manufacturer |  onsemi |
| Description | NTF6P02T3 |
| Buy | Stock & Price |
FEATURES
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● Low RDS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified Typical
APPLICATIONS
–6.0 AMPERES –20 VOLTS RDS(on) = 44 mW (Typ.) P–Channel D● Power Management in Portables and Battery–Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage Drain Current (Note 1) – Continuous @ TA = 25°C – Continuous @ TA = 70°C – Single Pulse (tp = 10 µs) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = –20 Vdc, VGS = –5.0 Vdc, IL(pk) = –10 A, L = 3.0 mH, RG = 25W) Thermal Resistance – Junction to Lead (Note 1) – Junction to Ambient (Note 2) – Junction to Ambient (Note 3) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VGS ID ID IDM PD TJ, Tstg EAS Value –20 ±8.0 –10 –8.4 –35 8.3 –5...
