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FDA38N30 - N-Channel MOSFET

Description

on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Features

  • RDS(on) = 70 mW (Typ. ) @ VGS = 10 V, ID = 19 A.
  • Low Gate Charge (Typ. 60 nC).
  • Low Crss (Typ. 60 pF).
  • 100% Avalanche Tested.
  • ESD Improved Capability.
  • RoHS Compliant.

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Datasheet Details

Part number FDA38N30
Manufacturer onsemi
File Size 274.89 KB
Description N-Channel MOSFET
Datasheet download datasheet FDA38N30 Datasheet

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    MOSFET – N-Channel, UniFETt 300 V, 38 A, 85 mW FDA38N30 Description UniFET MOSFET is onsemi’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features • RDS(on) = 70 mW (Typ.) @ VGS = 10 V, ID = 19 A • Low Gate Charge (Typ. 60 nC) • Low Crss (Typ. 60 pF) • 100% Avalanche Tested • ESD Improved Capability • RoHS Compliant Applications • PDP TV • Uninterruptible Power Supply • AC−DC Power Supply DATA SHEET www.onsemi.
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