Description
These P
Channel 2.5 V specified MOSFETs are produced using
onsemi’s advanced PowerTrench process that has been especially tailored to minimize on
state resistance and yet maintain low gate charge for superior switching performance.
Features
- 1.9 A,.
- 20 V. RDS(ON) = 0.170 W @ VGS =.
- 4.5 V
RDS(ON) = 0.250 W @ VGS =.
- 2.5 V.
- Low Gate Charge (3 nC Typical).
- Fast Switching Speed.
- High Performance Trench Technology for Extremely Low RDS(ON).
- SuperSOTt.
- 6 Package: Small Footprint (72% Smaller than
Standard SO.
- 8); Low Profile (1 mm Thick).
- These Devices are Pb.
- Free and are RoHS Compliant.
FDC6306P Datasheet
