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FDC6306P Datasheet P-channel MOSFET

Manufacturer: onsemi

Overview: DATA SHEET .onsemi. MOSFET– Specified, Dual P-Channel, POWERTRENCH) 2.

General Description

These P−Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are impractical.

Key Features

  • 1.9 A,.
  • 20 V. RDS(ON) = 0.170 W @ VGS =.
  • 4.5 V RDS(ON) = 0.250 W @ VGS =.
  • 2.5 V.
  • Low Gate Charge (3 nC Typical).
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • SuperSOTt.
  • 6 Package: Small Footprint (72% Smaller than Standard SO.
  • 8); Low Profile (1 mm Thick).
  • These Devices are Pb.
  • Free and are RoHS Compliant.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor
VBsemi Logo FDC6306P Dual P-Channel 20V MOSFET VBsemi

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