FDC6306P Description
These P−Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are...
FDC6306P Key Features
- 1.9 A, -20 V. RDS(ON) = 0.170 W @ VGS = -4.5 V
- Low Gate Charge (3 nC Typical)
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- SuperSOTt-6 Package: Small Footprint (72% Smaller than
- These Devices are Pb-Free and are RoHS pliant