onsemi FDC6306P
P-Channel MOSFET
| Part No. | FDC6306P |
|---|---|
| Datasheet | FDC6306P Download |
| Manufacturer |  onsemi |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These P−Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are impractical.FEATURES
● −1.9 A, −20 V. RDS(ON) = 0.170 W @ VGS = −4.5 V RDS(ON) = 0.250 W @ VGS = −2.5 V● Low Gate Charge (3 nC Typical)
● Fast Switching Speed
● High Performance Trench Technology for Extremely Low RDS(ON)
● SuperSOTt−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1 mm Thick).
● These Devices are Pb−Free and are RoHS Compliant
APPLICATIONS
● Load Switch● Battery Protection
● Power Management
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−Source Voltage −20 V VGSS Gat...
