FDC6306P - P-Channel MOSFET

Product Overview

onsemi

Datasheet Details

Part number	FDC6306P
Manufacturer	onsemi
File Size	324.88 KB
Description	P-Channel MOSFET
Datasheet	FDC6306P Datasheet
Additional preview pages of the FDC6306P datasheet.

Product details

Description

These P Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize on state resistance and yet maintain low gate charge for superior switching performance. 8 and TSSOP 8 packages are impractical.

Features

1.9 A,.
20 V. RDS(ON) = 0.170 W @ VGS =.
4.5 V RDS(ON) = 0.250 W @ VGS =.
2.5 V.
Low Gate Charge (3 nC Typical).
Fast Switching Speed.
High Performance Trench Technology for Extremely Low RDS(ON).
SuperSOTt.
6 Package: Small Footprint (72% Smaller than Standard SO.
8); Low Profile (1 mm Thick).
These Devices are Pb.
Free and are RoHS Compliant.

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Published: May 4, 2025 |