onsemi FDD4141
This P−Channel MOSFET has been produced using onsemi’s proprietary POWERTRENCH technology to deliver low RDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.FDD4141 Specifications
- Package : TO-252
- Mount Type : Surface Mount
- Breakdown Voltage : -40V
- Threshold Voltage : -1.8V
- RDS(on) Max : 12.3mΩ
- Input Capacitance : 2.775nF
- Min Breakdown Voltage : 40V
- Terminals : 2
- Channels : 1
- Rise Time : 7ns
- Fall Time : 15ns
- Max Power Dissipation : 69W
- Power Dissipation : 2.4W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | FDD4141 |
|---|---|
| Datasheet | FDD4141 Download |
| Manufacturer |  onsemi |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● Max RDS(on) = 12.3 mW at VGS = −10 V, ID = −12.7 A● Max RDS(on) = 18.0 mW at VGS = −4.5 V, ID = −10.4 A
● High Performance Trench Technology for Extremely Low RDS(on)
● This Device is Pb−Free and is RoHS Compliant
APPLICATIONS
● Inverter● Power Supplies MOSFET
MAXIMUM RATINGS
(TC = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage −40 V VGS Gate to Source Voltage 20 V ID Drain Current A −Continuous (Package limited) TC = 25C −50 −Continuous (Silicon limited) TC = 25C −58 −Continuous TA = 25C (Note 1a) −10.8 −Pulsed −100 EAS Single Pulse Avalanche Energy (Note 3) 337 mJ PD Power Dissipation −TC = 25C −TA = 25C (Note 1a) W 69 2.4 TJ, TSTG Operating and Storage Junction Temperature Range −55 to C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
