onsemi FDMC007N08LCDC
This N-Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.| Part No. | FDMC007N08LCDC |
|---|---|
| Datasheet | FDMC007N08LCDC Download |
| Manufacturer |  onsemi |
| Description | 80V 64A N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● Shielded Gate MOSFET Technology● Max RDS(on) = 6.8 mW at VGS = 10 V, ID = 22 A
● Max RDS(on) = 11.1 mW at VGS = 4.5 V, ID = 18 A
● 5 V Drive Capable
● 50% Lower Qrr than Other MOSFET Suppliers
● Lowers Switching Noise/EMI
● MSL1 Robust Package Design
● 100% UIL Tested
● These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● Primary DC-DC MOSFET● Synchronous Rectifier in DC-DC and AC-DC
● Motor Drive
● Solar
MAXIMUM RATINGS
(TA = 25 °C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 80 V VGS Gate to Source Voltage ±20 V ID Drain Current: A Continuous, TC = 25 °C (Note 5) 64 Continuous, TC = 100 °C (Note 5) 41 Continuous, TA = 25 °C (Note 1a) 15 Pulsed (Note 4) 339 EAS Single Pulse Avalanche Energy (Note 3) 150 mJ PD TJ, TSTG Power Dissipation: TC = 25°C TA = 25°C (Note 1a) Operating and Storage Junction Temperature Range W 57 3 −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.
