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FDMC2514SDC Datasheet PDF

onsemi FDMC2514SDC

This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process. This device has the added benefit of an efficient monolithic Schottky body diode.
Part No. FDMC2514SDC
Datasheet FDMC2514SDC Download
Manufacturer
onsemi
Description Dual N-Channel MOSFET
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FDMC2514SDC datasheet page 1 preview

GENERAL DESCRIPTION

FEATURES

„ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 22.5 A „ Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A „ High performance technology for extremely low rDS(on) „ SyncFET Schottky Body Diode „ RoHS Compliant Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

APPLICATIONS

„ Synchronous Rectifier for DC/DC Converters „ Telecom Secondary Side Rectification „ High End Server/Workstation Vcore Low Side Pin 1 G S S S D5 D6 4G 3S D D D D Top Dual CoolTM 33 Bottom D7 D8 2S 1S MOSFET

MAXIMUM RATINGS

TA = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C (Note 4) (Note 1a) EAS dv/dt Sing...
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